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SPR60P03 P-Channel Enhancement Mode Power MOSFET

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Description

P-Channel Enhancement Mode Power MOSFET SPR60P03 PRIMARY CHARACTERISTICS BVDSS -30V RDS(ON) 8.5mΩ ID -60A TJ,Max 150℃ .
The SPR60P03 is using trench DMOS technology.

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Datasheet Specifications

Part number
SPR60P03
Manufacturer
WILLAS
File Size
2.49 MB
Datasheet
SPR60P03-WILLAS.pdf
Description
P-Channel Enhancement Mode Power MOSFET

Features

* Advanced DMOS Trench technology

Applications

* The SPR60P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Parameter Symbol Ratings Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain Current 1 Continuous Drain Current 1 Pulsed Drain Cu

SPR60P03 Distributors

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P-Channel Enhancement Mode Power MOSFET WILLAS
WILLAS SPR60P03-like datasheet