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WFP12N65

Silicon N-Channel MOSFET

WFP12N65 Features

* 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V

* Ultra-low Gate Charge(Typical 51.7nC)

* Fast Switching Capability

* 100%Avalanche Tested

* Maximum Junction Temperature Range(150℃) General Description Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem i ’s adv an ce d planar stripe, VDM

WFP12N65 General Description

Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem i ’s adv an ce d planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for AC-DCswitching power su.

WFP12N65 Datasheet (635.33 KB)

Preview of WFP12N65 PDF

Datasheet Details

Part number:

WFP12N65

Manufacturer:

WINSEMI SEMICONDUCTOR

File Size:

635.33 KB

Description:

Silicon n-channel mosfet.

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WFP12N65 Silicon N-Channel MOSFET WINSEMI SEMICONDUCTOR

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