WFP12N65
Features
- 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 51.7n C)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
General Description
Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem i ’s adv an ce d planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for AC-DCswitching power supplies, DC-DCpower converters, high voltage H-bridge motor drive PWM
Absolute Maximum Ratings
Symbol
VDSS ID Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature (Note 2) (Note 1) (Note 3) (Note1) ±30 990 22 4.5 178 1.43 -55~150 300 A A V m J m J V/ns W W/℃ ℃...
