WFP650
Features
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- - 28A, 200v, RDS(on)=0.085Ω @VGS=10V Low gate charge (typical 95 n C) Low crss (typical 75 p F) Fast switching 100% avalanche tested Improved dv/dt capability
General Description
These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary , planar,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching Performance , and with stand high energy pulse in the avalanche and mutation mode.These devices are well suited for high efficiency switching DC/DC converters, Switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ,TSTG TL
Parameter
Drain-Source Voltage Drain Current -Continuous(TC=25℃) -Continuous(TC=100℃) Drain Current -Pulsed Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode...
