DHI020N03 210A 30V N-channel Enhancement Mode Power MOSFET

Description

DH020N03/DHF020N03/DHI020N03/ DHE020N03/DHB020N03/DHD020N03 210A 30V N-channel Enhancement Mode Power MOSFET 1 .
These N-channel enhanced vdmosfets used advanced trench technology design, provided excellent Rdson and low gate charge.

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Datasheet Specifications

Part number: DHI020N03
Manufacturer: WXDH
File Size: 1.18 MB
Datasheet: DHI020N03-WXDH.pdf
Description: 210A 30V N-channel Enhancement Mode Power MOSFET

Features

* Fast switching
* Low on resistance(Rdson≤2.0mΩ)
* Low gate charge(Typ: 65nC)
* Low reverse transfer capacitances(Typ: 435pF)
* 100% single pulse avalanche energy test

Applications

* SPMS applications TO-220C TO-220F TO-262
* Load switch
* Power management
* BMS System TO-263 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) TO-252B TO-251B Parameter Symbol Rating DH020N03/ DHI020N03/DHE020N03 /DHB020N03/DHD020N03

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DHI020N03 210A 30V N-channel Enhancement Mode Power MOSFET WXDH

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