LD01N60

Power FET

LD01N60 Features

* Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature GENERAL DESCRIPTION This high voltage MOSFET use

LD01N60 General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers.

LD01N60 Datasheet (319.66 KB)

LD01N60 Datasheet Preview — Preview of LD01N60 PDF

Datasheet Details

Part number:

LD01N60

Manufacturer:

Wanlida

File Size:

319.66 KB

Description:

Power fet.

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LD01N60 Power FET Wanlida

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LD01N60 Features

LD01N60 General Description

Datasheet Details

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LD01N60 Distributor