BT151-650LTN Datasheet | WeEn

description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring good bidirectional blocking voltage and high current surge capability with high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C). 2. Features and benefits - High junction operating temperature capability (Tj(max) = 150 °C) - Good bidirectional blocking voltage capability - High current surge capability - High thermal cycling performance - Planar passivated for voltage ruggedness and reliability 3. Applications - - - - - - Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation High junction operating temperature capability (Tj(max) = 150 °C) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VRRM repetitive peak reverse voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current Tj junction temperature Conditions half sine wave; Tmb ≤ 134 °C; Fig. 1; Fig. 2; Fig. 3 half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Values 650 12 120 132 150 Unit V A A A °C We En Semiconductors Symbol Parameter Static characteristics IGT gate trigger current IH holding current VT on-state voltage Dynamic characteristics d VD/dt rate of rise of off-state voltage Conditions VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 VD = 12 V; Tj = 25 °C; Fig. 9 IT = 12 A; Tj = 25 °C; Fig. 10 VDM = 436 V; Tj = 150 °C; RGK= 100 Ω; (VDM = 67% of VDRM); exponential waveform; 5. Pinning information Table 2. Pinning information Pin Symbol...