Part number:
WG30N65HFB1
Manufacturer:
WeEn
File Size:
893.01 KB
Description:
Igbt
Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
---|---|---|---|---|---|---|---|---|
![]() |
WeEn Semiconductor Co Ltd | WG30N65HFB1J | WeEn Semiconductors WG30N65HFB1/TO263/REEL 13\" Q1/T1 *STANDARD MARK SMD | Mouser Electronics | 0 | 1000 units |
$1.23
|
WG30N65HFB1 Datasheet (893.01 KB)
WG30N65HFB1
WeEn
893.01 KB
Igbt
* Maximum junction temperature 175 °C
* Positive Temperature efficient for easy paralleling
* Very soft, fast recovery anti-parallel diode
* High switching speed
* EMI Improved Design 3. Applications
* PFC
* Solar converters
* UPS
📁 Related Datasheet
WG30N65HF1 - IGBT
(WeEn)
WG30N65HF1
IGBT
Rev.01 - 24 January 2024
Product data sheet
1. General description
WG30N65HF1 uses advanced Fine Trench Field-stop IGBT technology w.
WG30N65HFW1 - IGBT
(WeEn)
WG30N65HFW1
IGBT
Rev.01 - 24 January 2024
Product data sheet
1. General description
WG30N65HFW1 uses advanced Fine Trench Field-stop IGBT technology.
WG30N65HA1 - IGBT
(WeEn)
WG30N65HA1
IGBT
Rev.01 - 22 January 2024
Product data sheet
1. General description
WG30N65HA1 uses advanced Fine Trench Field-stop IGBT technology w.
WG30N65HAW1 - IGBT
(WeEn)
WG30N65HAW1
IGBT
Rev.01 - 29 November 2023
Product data sheet
1. General description
WG30N65HAW1 uses advanced Fine Trench Field-stop IGBT technolog.
WG30N65HAW2 - IGBT
(WeEn)
WG30N65HAW2
IGBT
Rev.01 - 25 July 2024
Product data sheet
1. General description
WG30N65HAW2 uses advanced Fine Trench Field-stop IGBT technology wi.
WG30N65HAX1 - IGBT
(WeEn)
WG30N65HAX1
IGBT
Rev.01 - 29 January 2024
Product data sheet
1. General description
WG30N65HAX1 uses advanced Fine Trench Field-stop IGBT technology.