WG30N65HFB1 - IGBT

WeEn

WG30N65HFB1 Datasheet Preview — Preview of WG30N65HFB1 PDF

Datasheet Details

Part number	WG30N65HFB1
Manufacturer	WeEn
File Size	893.01 KB
Description	IGBT
Datasheet	WG30N65HFB1-WeEn.pdf

WG30N65HFB1 Product details

Description

WG30N65HFB1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO263 package to provide extremely low VCE(sat), and excellent switching performance.

Features

Maximum junction temperature 175 °C.
Positive Temperature efficient for easy paralleling.
Very soft, fast recovery anti-parallel diode.
High switching speed.
EMI Improved Design 3.

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Published: Mar 7, 2025 |