WG30N65MF1 IGBT

WeEn

WG30N65MF1 Description

WG30N65MF1 IGBT Rev.01 - 24 January 2024 Product data sheet 1.General .
WG30N65MF1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO-220AB package to provide extremely low Vce(sat), and ex.

WG30N65MF1 Features

* Maximum junction temperature 175 °C
* Positive Temperature efficient for easy paralleling
* Very soft, fast recovery anti-parallel diode
* Smooth & Optimized switching

WG30N65MF1 Applications

* PFC
* Solar converters
* UPS
* Welding Converters
* Mid to high range switching frequency converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCE Collector-emitter voltage, Tj ≥ 25 °C IC Symbol DC collector current, limit

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Datasheet Details

Part number: WG30N65MF1
Manufacturer: WeEn
File Size: 896.83 KB
Datasheet: WG30N65MF1-WeEn.pdf
Description: IGBT

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