WG30R135W1 Datasheet - WeEn

IGBT

WG30R135W1 Features

* Reverse Conducting IGBT with Monolithic Body Diode

* Maximum Junction Temperature 175 °C

* Low Conduction Losses

* Positive Temperature efficient for Easy Parallel Operating

* EMI Improved Design 3. Applications

* Microwave ovens

* Induction

WG30R135W1 General Description

WG30R135W1 uses advanced Fine Trench Field-stop technology IGBT with monolithic body diode in TO-247 package. This device is part of Reverse-Conducting of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency for soft commutation. RoHS hal.

WG30R135W1 Datasheet (815.75 KB)

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Datasheet Details

Part number:

WG30R135W1

Manufacturer:

WeEn

File Size:

815.75 KB

Description:

Igbt.

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WG30R135W1 Features

WG30R135W1 General Description

Datasheet Details

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