WG30R135W1 Datasheet (WeEn)

WG30R135W1, IGBT

WG30R135W1 uses advanced Fine Trench Field-stop technology IGBT with monolithic body diode in TO-247 package.

This device is part of Reverse-Conducting of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency for soft commutation.

RoHS hal

WG30R135W1 Features

* Reverse Conducting IGBT with Monolithic Body Diode

* Maximum Junction Temperature 175 °C

* Low Conduction Losses

* Positive Temperature efficient for Easy Parallel Operating

* EMI Improved Design 3. Applications

* Microwave ovens

* Induction