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WNSC201200W - Silicon Carbide Diode

WeEn

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Datasheet Details

Part number	WNSC201200W
Manufacturer	WeEn
File Size	458.58 KB
Description	Silicon Carbide Diode
Datasheet	WNSC201200W-WeEn.pdf

WNSC201200W Product details

Description

Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switched-mode power supplies.

Features

Highly stable switching performance.
High forward surge capability IFSM.
Extremely fast reverse recovery time.
Superior in efficiency to Silicon Diode alternatives.
Reduced losses in associated MOSFET.
Reduced EMI.
Reduced cooling requirements.
RoHS compliant.
High junction operating temperature capability (Tj(max) = 175 °C) 3.

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Published: Jul 18, 2019 |