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WNSC2D201200W-A - Silicon Carbide Diode

WeEn

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Datasheet Details

Part number	WNSC2D201200W-A
Manufacturer	WeEn
File Size	488.07 KB
Description	Silicon Carbide Diode
Datasheet	WNSC2D201200W-A-WeEn.pdf

WNSC2D201200W-A Product details

Description

Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switching mode power supplies.

Features

Highly stable switching performance.
High forward surge capability IFSM.
Extremely fast reverse recovery time.
Superior in efficiency to Silicon Diode alternatives.
Reduced losses in associated MOSFET.
Reduced EMI.
Reduced cooling requirements.
RoHS compliant.
High junction operating temperature capability (Tj(max) = 175 °C).
AEC-Q101 qualified 3.

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Published: Feb 11, 2025 |