WNSC6D02650P Silicon Carbide Diode

WeEn

Description

WNSC6D02650P Silicon Carbide Diode Rev.01 - 23 February 2024 Product data sheet 1.General .
Silicon Carbide Schottky diode in a SOD123 plastic package, designed for high voltage, high frequency, and ultra compact designs.

📥 Download Datasheet

WNSC6D02650P Datasheet Preview — Preview of WNSC6D02650P PDF

Datasheet Specifications

Part number: WNSC6D02650P
Manufacturer: WeEn
File Size: 469.73 KB
Datasheet: WNSC6D02650P-WeEn.pdf
Description: Silicon Carbide Diode

Features

* New 6th Generation Technology
* Low Forward Voltage Drop
* Low Reverse Leakage Current
* High Forward Surge Capability IFSM
* Reduced Losses in Associated MOSFET
* Reduced EMI
* Reduced Cooling Requirements
* RoHS Compliant h RoHS a

Applications

* Low power SMPS
* LED driver
* Gate driver bootstrap charger
* Noise snubber 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ;

WNSC6D02650P Distributors

📁 Related Datasheet

📌 All Tags

WNSC6D02650P Silicon Carbide Diode WeEn

WeEn WNSC6D02650P-like datasheet