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WNSC6D20650Y - Silicon Carbide Diode

WeEn

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Datasheet Details

Part number	WNSC6D20650Y
Manufacturer	WeEn
File Size	496.81 KB
Description	Silicon Carbide Diode
Datasheet	WNSC6D20650Y-WeEn.pdf

WNSC6D20650Y Product details

Description

Silicon Carbide Schottky diode in a IITO2202L plastic package, designed for high frequency, high efficiency systems.

Features

New 6th Generation Technology.
Low Forward Voltage Drop.
Low Reverse Leakage Current.
High Forward Surge Capability IFSM.
Reduced Losses in associated MOSFET.
Reduced EMI.
Reduced cooling requirements.
RoHS compliant.
Insulated package rated at 2500V RMS 3.

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Published: Feb 11, 2025 |