* SOURCE 2 4 1 1. GATE 2.4 DRAIN 3. SOURCE 2 3 D-PAK / (TO-252) Maximum Ratings(T =25 C Unless Otherwise Specified) A Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25˚C) , (VGS@10V, TC=100˚C) Pulsed Drain Current 1 Symbol VDS VGS ID IDM PD RθJC RθJA TJ
WTD9575
Weitron Technology
701.36 KB
Surface mount p-channel enhancement mode power mosfet.
WTD9575
Surface Mount P-Channel Enhancement Mode POWER MOSFET 3
P b Lead(Pb)-Free
1 GATE
DRAIN
DRAIN CURRENT -15 AMPERES DRAIN SOURCE VOLTAGE -60 VOL.
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