R600CHx
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Distributed gate thyristors.
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R600CH21 - HIGH POWER THYRISTOR
(YZPST)
Technical Data :
Page1 of 3
R600CH21
- Power Thyristor
2100 VDRM;
*******************************************************************************.
R600 - General Purpose Rectifier
(Powerex Power Semiconductors)
.
R6000 - High Voltage Rectifiers
(LGE)
R2500-R6000
High Voltage Rectifiers
Features
Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with alco.
R6000F - 0.2mA Fast Recovery High Voltage Rectifier
(Micro Commercial Components)
MCC
Features
• • • • AVALANCHE OPERATION UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOND BEVELED ROUND CHIP LOW COST
R3500F THRU R6000F
0.2mA Fast Reco.
R6000GP - High Voltage Silicon Rectifier
(MCC)
MCC R
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth # $
% # .
R6002END3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6002END3
FEATURES ·Drain Current –ID=1.7A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-R.
R6002END3 - Power MOSFET
(ROHM)
R6002END3
Nch 600V 2A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 3.4Ω ±1.7A 26W
lFeatures
1) Low on-resistance 2) Fast switching 4) Drive circuit.
R6002ENH - Power MOSFET
(ROHM)
R6002ENH
Nch 600V 2A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 3.4Ω ±1.7A 2W
lFeatures
1) Low on-resistance 2) Fast switching 3) Parallel use is.
R6003KND3 - Power MOSFET
(ROHM)
.
R6003KND3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6003KND3
FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Res.
