W332M64V-XBX Datasheet (White Electronic Designs)

W332M64V-XBX, 32Mx64 Synchronous DRAM

The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 536,870,912 bits.

Each chip is internally conﬁgured as a quad-bank DRAM with a synchronous interface.

Each of the chip’s 134,217,728-bit banks is organized as 8,192 rows by 1,024 columns by 16 bits.

W332M64V-XBX Features

* High Frequency = 100, 125, 133MHz Package:

* 219 Plastic Ball Grid Array (PBGA), 25 x 25mm 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive edge of system clock cycle Internal pipelined operation; column address can be changed every clock cycle Internal banks for