WNM2030 Datasheet - Will Semiconductor

WNM2030 N-Channel MOSFET

The WNM2030 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2030 is Pb-free. SOT-723 D 3.

WNM2030 Features

* z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-723 Applications 3 2

* 1 2 2 = Device Code

* = Month (A~Z) Marking Order information z Driver for Relay, Solenoid, Motor, LED etc. z

WNM2030-WillSemiconductor.pdf