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WNM2030

N-Channel MOSFET

WNM2030 Features

* z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-723 Applications 3 2

* 1 2 2 = Device Code

* = Month (A~Z) Marking Order information z Driver for Relay, Solenoid, Motor, LED etc. z

WNM2030 General Description

The WNM2030 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2030 is Pb-free. SOT-723 D 3.

WNM2030 Datasheet (273.15 KB)

Preview of WNM2030 PDF

Datasheet Details

Part number:

WNM2030

Manufacturer:

Will Semiconductor

File Size:

273.15 KB

Description:

N-channel mosfet.
WNM2030 WNM2030 Single N-Channel, 20V, 0.95A, Power MOSFET Http://www.sh-willsemi.com VDS (V) 20 Rds(on) (ȍ) 0.210@ VGS=4.5V 0.250@ VGS=2.5V 0.30.

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WNM2030 N-Channel MOSFET Will Semiconductor

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