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W968D6DA CellularRAM

W968D6DA Description

W968D6DA 256Mb Async./Page,Syn./Burst CellularRAM 1.GENERAL .
Winbond CellularRAM™ products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.

W968D6DA Features

* Supports asynchronous, page, and burst operations
* VCC, VCCQ Voltages: 1.7V
* 1.95V VCC 1.7V
* 1.95V VCCQ
* Random access time: 70ns
* Burst mode READ and WRITE access:
* Configuration: 256Mb 16Mx16 Vcc core voltage supply: 1.8V VccQ I/O voltage su

W968D6DA Applications

* The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings. To operate seamlessly on a burst Flash bus, CellularRAM products incorporate a tran

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Datasheet Details

Part number
W968D6DA
Manufacturer
Winbond
File Size
1.33 MB
Datasheet
W968D6DA-Winbond.pdf
Description
CellularRAM

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