PFU3N70HG - N-Channel MOSFET
PFU3N70HG Features
* Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 6.8 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 3.2 Ω (Typ.) @VGS=10V Halogen Free APPLICATION Low power
