Description
High frequency, www.datasheet4u.com
SILICON EPITAXIAL PLANNAR TRANSISTOR
high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose
QUICK REFERENCE DATA
SYMBOL
TO-220F
CONDITIONS VBE = 0V MIN MAX 100 60 5 25 1.5 1.5 0.5 UNIT V V A A W V V s
VCESM VCEO IC ICM Ptot VCEsat VBE tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter
C4596E_WingShingComputer.pdf
