5HB03N8 30V SO8 Complementary enhancementmode MOSFET H-Bridge

Winsemi

Description

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 5HB03N8 ment mode MOSFET H-Bridge 30V SO8 Complementary enhance enhancem Summary vic.
This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.

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Datasheet Specifications

Part number: 5HB03N8
Manufacturer: Winsemi
File Size: 579.66 KB
Datasheet: 5HB03N8_Winsemi.pdf
Description: 30V SO8 Complementary enhancementmode MOSFET H-Bridge

Features

* low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features

Applications

* N1G N2G DC Motor control DC-AC Inverters N1S/N2S Ordering information vice De Dev 5HB03N8 Reel size es) (inch (inche 13 Tape width (mm) 12 nti ty Qua Quan tit per reel 2,500 Device marking WFS 5HB03N8 Issue 1.0 - April 2010 1 Datasheet pdf - http://www. DataSheet4U. net/ w

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5HB03N8 30V SO8 Complementary enhancementmode MOSFET H-Bridge Winsemi

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