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SFP50N06 Silicon N-Channel MOSFET

SFP50N06 Description

SFP50N06 Silicon N-Channel MOSFET .
This Power MOSFET is produced using Winsemi’s trench layout-based process.

SFP50N06 Features

* RDS(on)(Max 22mΩ)@VGS=10V
* Ultra-low Gate Charge(Typical 31nC)
* Fast Switching Capability
* 100%Avalanche Tested

SFP50N06 Applications

* in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Parameter Drain Source Voltage Continuous Dr

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Datasheet Details

Part number
SFP50N06
Manufacturer
Winsemi
File Size
476.93 KB
Datasheet
SFP50N06-Winsemi.pdf
Description
Silicon N-Channel MOSFET

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