SFP50N06 Datasheet - Winsemi

SFP50N06, Silicon N-Channel MOSFET

SFP50N06 Silicon N-Channel MOSFET .
This Power MOSFET is produced using Winsemi’s trench layout-based process.

Features

* RDS(on)(Max 22mΩ)@VGS=10V
* Ultra-low Gate Charge(Typical 31nC)
* Fast Switching Capability
* 100%Avalanche Tested

Applications

* in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Parameter Drain Source Voltage Continuous Dr

SFP50N06-Winsemi.pdf