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WFP640 - Silicon N-Channel MOSFET

WFP640 Description

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This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.

WFP640 Features

* 18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V
* Ultra-low Gate Charge(Typical 45nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Isolation voltage(VISO=4000V AC)

WFP640 Applications

* such as automotive, high efficiency switching for DC/DC converters,and DC motor control. Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single

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Datasheet Details

Part number
WFP640
Manufacturer
Winsemi
File Size
529.77 KB
Datasheet
WFP640-Winsemi.pdf
Description
Silicon N-Channel MOSFET

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Silicon N-Channel MOSFET Winsemi
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