WFP640
Features
- 18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 45n C)
- Fast Switching Capability
- 100%Avalanche Tested
- Isolation voltage(VISO=4000V AC)
- Maximum Junction Temperature Range(150℃)
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters,and DC motor control.
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)...
