WSD1006GDN22
Description
The WSD1006GDN22 is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The WSD1006GDN22 meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Features
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent Cd V/dt effect decline
- 100% EAS Guaranteed
- Green Device Available
N-Channel MOSFET
Product Summery
BVDSS 100V
RDS(ON) 20mΩ
ID 6.5A
Applications
- Power Management in TV Converter.
- DC-DC Converter
- LED TV Back Light
DFN2X2-6L Pin Configuration
(3) G
D (1,2,5,6,7)
S (4,8)
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25°C IDP EAS
PD@TC=25°C TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy Total Power Dissipation Storage Temperature Range Operating...
