WSD25280DN56G
Description
The WSD25280DN56G is the highest performance trench N-Ch MOSFET with extreme high celldensity ,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD25280DN56G meet the Ro HS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cd V/dt effect decline z 100% EAS Guaranteed z Green Device Available
Product Summery
BVDSS 25V
RDSON 0.7mΩ
ID 280A
Applications z High Frequency Point-of-Load Synchronous
Buck Converter z Networking DC-DC Power System z Power Tool Application
DFN5X6-8L Pin Configuration
D1 (5,6,7,8)
(4) G1
S1 (1,2,3)
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=70℃
IDM EAS IAS PD@TC=25℃ TSTG
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current（Silicon Limited）1,7 Continuous Drain Current(Silicon Limited）1,7 Pulsed Drain Current2 Single...
