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WSG02P06 Datasheet - Winsok

WSG02P06 P-Ch MOSFET

This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circ.

WSG02P06 Features

* z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS RDSON ID -60V 175mΩ -2A Applications z High Frequency Point-of-Load Synchronous Buck Converter. z Networking DC-DC Po

WSG02P06 Datasheet (1.95 MB)

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Datasheet Details

Part number:

WSG02P06

Manufacturer:

Winsok

File Size:

1.95 MB

Description:

P-ch mosfet.

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WSG02P06 P-Ch MOSFET Winsok

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