WFF634 Datasheet, Mosfet, Wisdom technologies

WFF634 Features

• Mosfet
• RDS(on) (Max 0.45 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 29nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Teste

PDF File Details

Part number:

WFF634

Manufacturer:

Wisdom technologies

File Size:

834.00kb

Download:

📄 Datasheet

Description:

N-channel mosfet. This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially desi

TAGS

WFF634

Wisdom technologies

📁 Related Datasheet

WFF630 - Silicon N-Channel MOSFET (Winsemi)
WFF630 Silicon N-Channel MOSFET Features ■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 22nC) ■ Fast Switching Capability ■ 10.

WFF640 - N-Channel MOSFET (Wisdom technologies)
Wisdom Semiconductor WFF640 N-Channel MOSFET Features ■ ■ RDS(on) (Max 0.18 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 45nC) ■ Improv.

WFF6N90 - N-Channel MOSFET (Wisdom technologies)
PROVISIONAL Wisdom Semiconductor WFF6N90 N-Channel MOSFET Features ■ RDS(on) (Max 2.4 Ω )@VGS=10V ■ Gate Charge (Typical 33nC) ■ Improved dv/dt Cap.

WFF - Fast Fusible Metal Film Resistors (Welwyn Components Limited)
Fast Fusible Metal Film Resistors WFF Series Welwyn Components • • • Low power fusing Predictable fusing characteristics Flameproof protection .

WFF10N60 - N-Channel MOSFET (Wisdom technologies)
HIGH VOLTAGE N-Channel MOSFET      WFF10N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext.

WFF10N60 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)
.DataSheet.in WFF10N60 Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast .

WFF10N65 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)
.DataSheet.in F10N6 5 WF WFF 10N65 Silicon N-Channel MOSFET Features � � � � � � 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43.

WFF10N65L - Silicon N-Channel MOSFET (Winsemi)
WFF10N65L Product Description Silicon N-Channel MOSFET Features � 10A,650V,RDS(on)(Max1.0Ω)@VGS=10V � Ultra-low Gate charge(Typical 32nC) � Fast Switc.

WFF1101 - (WFF1xx1) GB Directions for Use (BOSCH)
w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a t a e h S 4 t e U m o .c .

WFF1121 - (WFF1xx1) GB Directions for Use (BOSCH)
w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a t a e h S 4 t e U m o .c .