C6D06065G Datasheet - Wolfspeed

C6D06065G 6A Silicon Carbide Schottky Diode

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various applica.

C6D06065G Features

* Low forward voltage (VF) drop with positive temperature coefficient

* Zero reverse recovery current/forward recovery voltage

* Temperature-independent switching behavior

* Low leakage current (IR) Maximum Ratings (TC = 25 °C Unless Otherwise Specified) Parameter R

C6D06065G-Wolfspeed.pdf