C6D06065G - 6A Silicon Carbide Schottky Diode
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.
SiC diodes can be easily paralleled to meet various applica
C6D06065G Features
* Low forward voltage (VF) drop with positive temperature coefficient
* Zero reverse recovery current/forward recovery voltage
* Temperature-independent switching behavior
* Low leakage current (IR) Maximum Ratings (TC = 25 °C Unless Otherwise Specified) Parameter R
