C6D10065G 10A Silicon Carbide Schottky Diode

Wolfspeed

Description

C6D10065G 650 V, 10 A Silicon Carbide Schottky Diode .
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency stan.

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Datasheet Specifications

Part number: C6D10065G
Manufacturer: Wolfspeed
File Size: 722.83 KB
Datasheet: C6D10065G-Wolfspeed.pdf
Description: 10A Silicon Carbide Schottky Diode

Features

* Low forward voltage (VF) drop with positive temperature coefficient
* Zero reverse recovery current/forward recovery voltage
* Temperature-independent switching behavior
* Low leakage current (IR) Maximum Ratings (TC = 25 °C Unless Otherwise Specified) Parameter R

Applications

* TO-263-2 Package Types: TO-263-2 PN: C6D10065G Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with either the Cree name and/or lo

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C6D10065G 10A Silicon Carbide Schottky Diode Wolfspeed

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