C6D10065G

10A Silicon Carbide Schottky Diode

Wolfspeed

C6D10065G Features

* Low forward voltage (VF) drop with positive temperature coefficient

* Zero reverse recovery current/forward recovery voltage

* Temperature-independent switching behavior

* Low leakage current (IR) Maximum Ratings (TC = 25 °C Unless Otherwise Specified) Parameter R

C6D10065G General Description

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various applica.

C6D10065G Datasheet (722.83 KB)

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Datasheet Details

Part number:

C6D10065G

Manufacturer:

Wolfspeed

File Size:

722.83 KB

Description:

10a silicon carbide schottky diode.

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C6D10065G 10A Silicon Carbide Schottky Diode Wolfspeed

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C6D10065G Features

C6D10065G General Description

Datasheet Details

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