C6D10065G Datasheet (Wolfspeed) - 10A Silicon Carbide Schottky Diode

C6D10065G, 10A Silicon Carbide Schottky Diode

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

SiC diodes can be easily paralleled to meet various applica

C6D10065G Features

* Low forward voltage (VF) drop with positive temperature coefficient

* Zero reverse recovery current/forward recovery voltage

* Temperature-independent switching behavior

* Low leakage current (IR) Maximum Ratings (TC = 25 °C Unless Otherwise Specified) Parameter R