CAB008M12GM3T
Features
- Ultra-Low Loss
- High Frequency Operation
- Zero Turn-Off Tail Current from MOSFET
- Normally-Off, Fail-Safe Device Operation
- Optional Pre-Applied Thermal Interface Material
VDS RDS(on)
1200 V 8 mΩ
DC+
G1 S1
T1
G2 S2
-t°
T2 DC-
Typical Applications
- DC-DC Converters
- EV Chargers
- High-Efficiency Converters / Inverters
- Renewable Energy
- Smart-Grid / Grid-Tied Distributed Generation
System Benefits
- Enables pact, Lightweight Systems
- Increased System Efficiency, due to Low Switching
& Conduction Losses of Si C
- Reduced Thermal Requirements and System Cost
Key Parameters
Parameter
Symbol Min. Typ. Max. Unit Test Conditions
Note
Drain-Source Voltage
Maximum Gate-Source Voltage Operational Gate-Source Voltage
VGS(max) VGS(op)
-10
+23
-4/15
V Transient Static
Fig. 33 Note 1
DC Continuous Drain Current (TVJ ≤ 150 °C) DC Continuous Drain Current (TVJ ≤ 175 °C) DC Source-Drain Current (Body...
