WAB400M12BM3
Features
VDS IDS
1200 V 400 A
V+
- Industry Standard 62 mm Footprint
- High Humidity Operation THB-80 (HV-H3TRB)
- High Junction Temperature (175 °C) Operation
- Implements Conduction Optimized Third
Generation Si C MOSFET Technology
- Low Inductance (10.2 n H) Design
- Silicon Nitride Insulator and Copper Baseplate
Applications
System Benefits
G1 K1
Mid
G2 K2
V-
- Railway & Traction
- Solar
- EV Chargers
- Industrial Automation & Testing
- Fast Time-to-Market with Minimal Development
Required for Transition from 62 mm Si IGBT
Packages
- Increased System Efficiency, due to Low Switching &
Conduction Losses of Si C
- High Reliability Material Selection
Key Parameters
Parameter
Symbol Min. Typ. Max. Unit Conditions
Note
Drain-Source Voltage
TC = 25 °C
Gate-Source Voltage, Maximum Value Gate-Source Voltage, Remended
VGS(max) VGS(op)
-8
+19
-4/+15
V Transient...
