WSB1151 Datasheet - Wooseok

WSB1151 PNP EPITAXIAL SILICON TRANSISTOR

WSB1151 PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT AMPLIFIER ◇ Low Collector Saturation Voltage ◇ Complement to WSD1691 WR0459 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current(DC) Collector Current(Pulse) Collector Power Dissipation(Tc=25℃) Collector Power Dissipation(Ta=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PC PC Tj Tstg (Ta=25℃) Value -60 -60 -7 -5.0 -8.0 20 1.3 150 -55~ +150.

WSB1151 Datasheet (198.75 KB)

WSB1151 Datasheet Preview — Preview of WSB1151 PDF

Datasheet Details

Part number:

WSB1151

Manufacturer:

Wooseok

File Size:

198.75 KB

Description:

Pnp epitaxial silicon transistor.

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WSB1151 PNP EPITAXIAL SILICON TRANSISTOR Wooseok

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