WSB1151 Datasheet (Wooseok) - PNP EPITAXIAL SILICON TRANSISTOR

WSB1151, PNP EPITAXIAL SILICON TRANSISTOR

WSB1151 PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT AMPLIFIER ◇ Low Collector Saturation Voltage ◇ Complement to WSD1691 WR0459 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current(DC) Collector Current(Pulse) Collector Power Dissipation(Tc=25℃) Collector Power Dissipation(Ta=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PC PC Tj Tstg (Ta=25℃) Value -60 -60 -7 -5.0 -8.0 20 1.3 150 -55~ +150