XR3400B
Description
The XR3400B is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The XR3400B meet the Ro HS and Green Product requirement with full function reliability approved.
SOT23 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Rating 30
±12 4.5 2.8 16.4 1.1 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Typ. -----
Max. 113 ---
Unit ℃/W ℃/W
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N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25℃ unless otherwise specified)
Symbol
Parameter...