XP02N90I N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP02N90I Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Isolation Full Package ▼ Fast Switching Chara.
XP02N90 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP02N90I
Manufacturer: YAGEO
File Size: 251.44 KB
Datasheet: XP02N90I-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID 900V 7.2Ω 1.9A G D S TO-220CFM(I) Absolute Ma

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XP02N90I N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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