XP03N70J
Description
XP03N70 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The straight lead version TO-251 package is widely preferred for all mercial-industrial through hole applications.
BVDSS RDS(ON) ID
G DS
600V 3.6Ω 3.3A
TO-251(J)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
EAS IAR TSTG TJ
Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation
Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range
+30 3.3 2.1 13.2 54.3 0.44 31 2.5 -55 to 150 -55 to 150
V A A A W W/℃ m J A ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum...
