XP09N20H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP09N20H Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low On-resistance ▼ Fast Switching Characteri.
XP09N20 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP09N20H
Manufacturer: YAGEO
File Size: 211.62 KB
Datasheet: XP09N20H-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID 200V 380mΩ 8.6A G DS TO-252(H) Absolute Maximum Ratings@Tj=25oC(unless

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XP09N20H N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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