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XP3N1R0MT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

XP3N1R0MT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Ultra Low On-resistance.
XP3N1R0 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number
XP3N1R0MT
Manufacturer
YAGEO
File Size
324.25 KB
Datasheet
XP3N1R0MT-YAGEO.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. BVDSS RDS(ON) ID4 30V 1.05mΩ 245A D D D D S S S G PMPAK® 5x6 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter

XP3N1R0MT Distributors

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO
YAGEO XP3N1R0MT-like datasheet