XP4N2R1AMT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP4N2R1AMT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Ultra Low On-resistanc.
XP4N2R1A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP4N2R1AMT
Manufacturer: YAGEO
File Size: 324.96 KB
Datasheet: XP4N2R1AMT-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. BVDSS RDS(ON) 40V 2.1mΩ D D D D S S S G PMPAK® 5x6 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating

XP4N2R1AMT Distributors

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XP4N2R1AMT N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP4N2R1AMT-like datasheet