CS83702
YOUNGFUKANG
3.08MB
19w mono audio amplifier.
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CS8371 - 8V/1A/ 5V/250mA Dual Regulator with Independent Output Enables and NoCap
(Cherry Semiconductor Corporation)
CS8371
CS8371
8V/1A, 5V/250mA Dual Regulator with Independent Output Enables and NoCapª
Description
The CS8371 is a 8V/5V dual output linear regulato.
CS8371 - Dual Regulator
(ON Semiconductor)
..
CS8371 8.0 V/1.0 A, 5.0 V/250 mA Dual Regulator with Independent Output Enables and NOCAPt
The CS8371 is an 8.0 V/5.0 V dual outp.
CS830 - VDMOS Transistors
(ETC)
CS830
CS830 VDMOS
1.
CS830 VDMOS ,。 : ● ● ● ● :TO-220AB
10.7max
4.8max 1.4max φ3.84 6.9max
2.
2.1 ,Tamb= 25℃ ID VGS IAR () RθJC.
CS830 - N-Channel MOSFET
(LZG)
IRF830(CS830)
: DC/DC 。
N-Channel MOSFET/N MOS
Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mo.
CS8302 - Filter-Free Class-D Audio Amplifier
(ChipSourceTek)
ChipSourceTek
TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://.ChipSourceTek. E-mail: Tony.Wang@ChipSourceTek. InFo@ChipSou.
CS8302M - Filter-Free Class-D Audio Amplifier
(ChipSourceTek)
ChipSourceTek
TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://.ChipSourceTek. E-mail: Tony.Wang@ChipSourceTek. InFo@ChipSou.
CS8305E - 5.0W mono / ultra-low EMI / filterless Class-D audio amplifier
(Chipstar Micro-electronics)
Chipstar Micro-electronics
CS8305E
5.0W、EMI、D
C S 8 3 0 5 E , E M I,5 . 0 W D 。CS8305EPWM 、P C B , 。 9 0 % , .
CS830A3RD - Silicon N-Channel Power MOSFET
(Huajing Microelectronics)
Silicon N-Channel Power MOSFET
CS830 A3RD
○R
General Description:
CS830 A3RD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-al.
CS830A4RD - Silicon N-Channel Power MOSFET
(Huajing Microelectronics)
Silicon N-Channel Power MOSFET
CS830 A4RD
○R
General Description:
CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
CS830A8RD - Silicon N-Channel Power MOSFET
(Huajing Microelectronics)
Silicon N-Channel Power MOSFET
CS830 A8RD
○R
General Description:
CS830 A8RD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-al.