GuangDong Yuejing High Technology CO.,LTD. APPLICATION：High-Gain Amplifier. C2062 NPN silicon MAXIMUM RATING（Ta＝25℃） PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 10 V Collector current IC 300 mA Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg ﹣55~150 ℃ ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAME.
