Datasheet Summary
DONGGUAN ZHONGGUI ELECTRONICS CO., LTD
TO-3P Plastic-Encapsulate Transistors
3DA5200C TRANSISTOR (NPN)
Features z High Breakdown Voltage z High Current and Power Capacity
- 3P
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value 120 120
5 15 3 42 150 -55~+150
Unit V V V A W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage...
