ZMC88212U
Description
It bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). It bines one N Channel MOSFET and one P channel MOSFET.
- Features
- Advance high cell density Trench technology
- Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching
- Dual DIE in one package
- Application
- Power Management in Notebook puter
- BLDC Motor driver
- Ordering Information: Part NO. Marking Packing Information Basic ordering unit (pcs)
Dual DIE Power MOSFET
- Product Summary
VDS1 =20V VDS2 =-20V
RDS(ON)1 =36mΩ RDS(ON)2 =75mΩ ID1 =4A ID2 =-3A
D1 S1 D2 654
1 23 G1 S2 G2
1 SOT23-6
ZMC88212U 88212
REEL TAPE 3000
- N Channel Absolute Maximum Ratings（TC =25℃）
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
±12
ID@TC=25℃
Continuous Drain Current
ID@TC=75℃
ID@TC=100℃
Pulsed Drain Current...
