CJD01N60 Datasheet - ZPSEMI

CJD01N60, N-Channel Power MOSFET

CJD01N60 TO-251-3L Plastic-Encapsulate MOSFETS CJD01N60 N-Channel Power MOSFET General .
The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

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Datasheet Details

Part number:

CJD01N60

Manufacturer:

ZPSEMI

File Size:

710.58 KB

Description:

N-Channel Power MOSFET

Features

* z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode z Diode is Charact

Applications

* in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. TO-251-3L 1. GATE 2. DRAIN 3. SOUR

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CJD01N60 N-Channel Power MOSFET ZPSEMI

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