• Part: FXT458
  • Description: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: Zetex Semiconductors
  • Size: 26.83 KB
Download FXT458 Datasheet PDF
Zetex Semiconductors
FXT458
FEATURES - 400 Volt VCEO - 0.5 Amp continuous current - Ptot= 1 Watt REFER TO ZTX458 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) h FE f T Cobo 100 100 15 50 5 MIN. 400 400 5 100 100 100 0.2 0.5 0.9 0.9 300 MHz p F SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg TYP. MAX. E-Line TO92 patible VALUE 400 400 5 300 1 -55 to +200 UNIT V V V n A n A n A V V V V CONDITIONS. IC=100µ A IC=10m A- IE=100µ A VCB=320V VCE=320V VEB=4V IC=20m A, IB=2m A IC=50m A, IB=6m A IC=50m A, IB=5m A IC=50m A, VCE=10V IC=1m A, VCE=10V IC=50m A, VCE=10V IC=100m A, VCE=10V- IC=10m A, VCE=20V f=20MHz VCB=20V, f=1MHz UNIT V V V m A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown...