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ZDT617 - DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS

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SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT617 C1 C1 C2 C2 PARTMARKING DETAIL — T617 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE 15 15 5 12 3 -55 to +150 UNIT V V V A A °C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally SYMBOL Ptot VALUE 2 2.5 16 20 62.
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