ZVN4210G - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN4210G Features
* Low RDS(on) = 1.5Ω PARTMARKING DETAIL - ZVN4210 ZVN4210G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I
