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BBY31 - SILICON PLANAR VARIABLE CAPACITANCE DIODE

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Part number BBY31
Manufacturer Zetexs
File Size 35.34 KB
Description SILICON PLANAR VARIABLE CAPACITANCE DIODE
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    SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 – JANUARY 1998 PIN CONFIGURATION 1 BBY31 2 1 PARTMARKING DETAIL BBY31 – S1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL P tot T j:T stg VALUE 330 -55 to +150 UNIT mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Reverse current SYMBOL V BR MIN. 28.0 TYP. MAX. UNIT V CONDITIONS. I R = 10 µ A V R = 28V V R = 28V, T amb = 85°C IR 10 1.0 nA µA TUNING CHARACTERISTICS (at Tamb = 25°C). PARAMETER Diode Capacitance SYMBOL Cd 1.8 Capacitance Ratio Series Resistance Cd / Cd rd 5.0 1.2 Ω MIN. TYP. 17.5 11.5 2.8 MAX. UNIT pF pF pF CONDITIONS.
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