BBY31 Datasheet (Zetexs) - SILICON PLANAR VARIABLE CAPACITANCE DIODE

BBY31, SILICON PLANAR VARIABLE CAPACITANCE DIODE

SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 JANUARY 1998 PIN CONFIGURATION 1 BBY31 2 1 PARTMARKING DETAIL BBY31 S1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS.

PARAMETER Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL P tot T j:T stg VALUE 330 -55 to +150 UNIT mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER Reverse Breakdown Voltage Reverse current SYMBOL V BR MIN.

28.0 TYP.

MAX.

UNIT V CONDITIONS.