CSD16323Q3 - N-Channel Power MOSFET
This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.
Top View S1 8D S2 7D S3 D G4 6D 5D P0095-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V)
CSD16323Q3 Features
* 1 Optimized for 5-V Gate Drive
* Ultra-Low Qg and Qgd
* Low Thermal Resistance
* Avalanche Rated
* Lead-Free Terminal Plating
* RoHS Compliant
* Halogen Free
* SON 3.3-mm × 3.3-mm Plastic Package 2 Applications
* Point-of-Load
