CSD16323Q3 Datasheet - Texas Instruments

CSD16323Q3 N-Channel Power MOSFET

This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0095-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) .

CSD16323Q3 Features

* 1 Optimized for 5-V Gate Drive

* Ultra-Low Qg and Qgd

* Low Thermal Resistance

* Avalanche Rated

* Lead-Free Terminal Plating

* RoHS Compliant

* Halogen Free

* SON 3.3-mm × 3.3-mm Plastic Package 2 Applications

* Point-of-Load

CSD16323Q3-etcTI.pdf