CSD16411Q3 Datasheet - Texas Instruments

CSD16411Q3 25V N-Channel Power MOSFET

This 25-V, 8-mΩ, 3.3-mm × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance V.

CSD16411Q3 Features

* 1 Ultra-Low Qg and Qgd

* Low-Thermal Resistance

* Avalanche Rated

* Lead-Free Terminal Plating

* RoHS Compliant

* Halogen Free

* SON 3.3-mm × 3.3-mm Plastic Package 2 Applications

* Point-of-Load Synchronous Buck Converter for Applicat

CSD16411Q3-etcTI.pdf