Download CSD17308Q3 Datasheet PDF
Texas Instruments
CSD17308Q3
Features - 1 Optimized for 5-V gate drive - Ultra-low Qg and Qgd - Low thermal resistance - Avalanche rated - Lead-free terminal plating - Ro HS pliant - Halogen free - VSON 3.3 mm × 3.3 mm plastic package 2 Applications - Notebook point of load - Point-of-load synchronous buck in networking, tele, and puting systems 3 Description This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON Nex FET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. Top View S 8D S 7D S 6D D G 5D P0095-01 Product Summary TA = 25°C VDS Drain-to-source voltage Qg Gate charge total (4.5 V) Qgd Gate charge gate-to-drain RDS(on) Drain-to-source on-resistance VGS(th) Threshold voltage VALUE VGS = 3 V VGS = 4.5 V VGS = 8 V 12.5 9.4 8.2 UNIT V n C n C mΩ Device Information(1) DEVICE QTY MEDIA PACKAGE CSD17308Q3 2500 13-Inch Reel SON 3.30 mm × 3.30 mm Plastic...