CSD17308Q3 Datasheet - Texas Instruments

CSD17308Q3 N-Channel MOSFET

This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. Top View S 8D S 7D S 6D D G 5D P0095-01 Product Summary TA = 25°C VDS Drain-to-source voltage Qg Gate charge total (4.5 V) Qgd.

CSD17308Q3 Features

* 1 Optimized for 5-V gate drive

* Ultra-low Qg and Qgd

* Low thermal resistance

* Avalanche rated

* Lead-free terminal plating

* RoHS compliant

* Halogen free

* VSON 3.3 mm × 3.3 mm plastic package 2 Applications

* Notebook poin

CSD17308Q3 Datasheet (520.25 KB)